随着半导体制造工艺向深亚微米及纳米级发展，传统的光刻技术逐渐接近极限，集成电路晶体管数目的增加和特征尺寸的缩小越发缓慢和困难，“摩尔定律”的延续面临巨大挑战。同时，传统封装中信号传输距离长带来的互连延迟问题日益严重，难以满足芯片高速和低功耗的要求。为克服集成电路和传统封装面临的难题，三维集成技术应运而生。其中硅通孔( Through Silicon Via，TSV) 技术被认为是实现三维集成最有前景的技术。
TSV 技术通过在芯片与芯片、晶圆与晶圆之间制作垂直通孔，实现芯片之间的直接互连。它能够使芯片在三维方向堆叠的密度最大、芯片间的互连线最短、外形尺寸最小，显著提高芯片速度，降低芯片功耗，因此成为目前电子封装技术中最引人注目的一种技术。然而，硅是一种半导体材料，TSV 周围的载流子在电场或磁场作用下可以自由移动，对邻近的电路或信号产生影响，影响芯片性能。玻璃材料没有自由移动的电荷，介电性能优良，热膨胀系数( CTE) 与硅接近，以玻璃替代硅材料的玻璃通孔( Through Glass Via，TGV) 技术可以避免TSV的问题，是理想的三维集成解决方案。此外，TGV 技术无需制作绝缘层，降低了工艺复杂度和加工成本。TGV 及相关技术在光通信、射频、微波、微机电系统、微流体器件和三维集成领域有广泛的应用前景。
The advantages of Through-Glass Via (TGV) technology compared to Through-Silicon Via (TSV) technology are mainly reflected in:
Excellent high-frequency electrical properties. Glass is an insulating material with a dielectric constant that is only about one-third of that of silicon, and its loss factor is 2-3 orders of magnitude lower than that of silicon, which significantly reduces substrate loss and parasitic effects, ensuring the integrity of the transmitted signal.
Large-size ultra-thin glass substrates are readily available. Glass manufacturers such as Corning, Asahi, and SCHOTT can provide extra-large size (>2m x 2m) and ultra-thin (<50µm) panel glass, as well as ultra-thin flexible glass materials.
Low cost. Benefiting from the easy availability of large-size ultra-thin panel glass and the elimination of the need for depositing an insulating layer, the manufacturing cost of glass interposers is about only one-eighth that of silicon-based interposers.
Simplified manufacturing process. There is no need to deposit insulating layers on the substrate surface or on the inner walls of Through-Glass Vias (TGVs), and thinning of the ultra-thin interposer is not required.
Strong mechanical stability. Even when the thickness of the interposer is less than 100µm, warping remains minimal.
Wide application range. This is an emerging vertical interconnect technology used in the field of wafer-level packaging. It offers a novel technical approach for achieving the shortest possible distances and minimal spacing between chips, providing excellent electrical, thermal, and mechanical properties. This technology has unique advantages in fields such as RF chips, high-end MEMS sensors, and high-density system integration. It is considered one of the preferred options for the next-generation 3D packaging of 5G and 6G high-frequency chips.
TGV 的成形工艺主要包括喷砂、超声波钻孔、湿法刻蚀、深反应离子刻蚀、光敏刻蚀、激光刻蚀、激光诱导深度刻蚀以及聚焦放电成孔等。
硅基转接板制备流程
TSV Interposer
原文始发于微信公众号（元器件封装测试之友）：TSV TGV介绍（先进封装）
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