【Invitation】The 4th Power Semiconductor Industry Forum 2025 (June 13, 2025 · Suzhou)

Translation: Diagram of the Semiconductor Power Devices Industry Chain, sourced from the Shangyang Tong prospectus.

Translation: The upstream of the semiconductor power device industry chain mainly involves the supply of raw materials and equipment, including the supply of wafers, lithography machines, lead frames, wide bandgap materials, and other auxiliary materials. The midstream mainly consists of the research and development, design, manufacturing, and packaging and testing of semiconductor power devices. The downstream application markets cover different fields, including new energy charging piles, photovoltaic energy storage, rail transportation, new energy vehicles, data centers, servers and communication power supplies, industrial control automation, and consumer electronics.

Translation: Diagram of Semiconductor Device Applications, sourced from Infineon.

Translation: Although different application fields and scenarios have varying performance requirements for semiconductor power devices, all are evolving towards higher power density, miniaturization, higher efficiency, lower energy consumption, and higher reliability. In order to meet the differentiated application needs of power semiconductor devices, it is often necessary to continuously optimize device performance through new materials, new structures, new packaging, and intelligence, among other key technologies.

▲Si、SiC、GaN性能比较，图源网络

自20世纪50年代以来，硅（Si）一直是半导体的主要材料。目前，硅器件的发展已经十分成熟，Si基IGBT器件凭借其优异的性能得到了广泛应用，在过去的30年内不断地更新换代，不断有新的器件结构被提出，目前主流产品可分为7代。尽管如此，受限于硅材料特性的限制，硅器件的发展空间已经较为有限。近年来，碳化硅（SiC）、氮化镓（GaN）等宽禁带半导体材料快速发展，在部分应用场合替代Si材料，例如碳化硅功率器件加速“上车”，越来越多的新能源新车型导入了碳化硅技术，搭载碳化硅的新车型密集发布；同时在手机快充领域风生水起的氮化镓在车用场景的应用持续取得进展，被用于座舱内快充、车载激光雷达等，未来有望应用在新能源汽车车载充电器、DC/DC转换器、牵引驱动或电机控制等领域。

Translation: As the application fields of power semiconductor devices continue to expand, the performance requirements for these devices are also becoming increasingly demanding. Therefore, the development of new packaging technologies is necessary to enhance the performance of power semiconductor devices. These include innovations in copper (or aluminum) ceramic substrates, heat dissipation substrates, encapsulation materials, and casing materials, as well as key technologies such as ultrasonic bonding, large-area silver sintering, and copper interconnects.

Translation: Ebang will host the fourth Power Semiconductor Industry Forum in Suzhou on June 13, 2025. This forum aims to bring together experts, scholars, and corporate representatives from the power semiconductor device industry (Si/SiC/GaN) to deeply discuss the current development, technical challenges, and future trends of power semiconductor devices. Through exchange and cooperation, the forum will promote technological innovation in the industry and facilitate the widespread application of semiconductor power devices across various fields.

（往届功率半导体论坛精彩瞬间）

Translation: More related topics are being collected. For speeches and sponsorships, please contact Ms. Zhang: 13418617872 (also WeChat).

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